Low-loss, low-crosstalk waveguide crossing for scalable integrated silicon photonics applications

A waveguide crossing based on multi-mode interference is designed and experimentally characterized on the silicon platform. The insertion loss of the device is measured as 43 ± 4 mdB per crossing, with a crosstalk of < -50 dB between 1550 and 1560 nm, in good agreement with predictions from 3D finite-difference time-domain simulations. Furthermore, the device backscatter was investigated using white light reflectometry and no significant backscatter was observed from 160 waveguide crossings in the time domain. In the frequency domain, the backscatter of the waveguide crossing device was measured experimentally for the first time, achieving a backscatter of -55 dB. The crossing has a footprint of 14.3 x 14.3 µm² and can be fabricated in a single step.