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Related Experiment Video

Updated: Dec 21, 2025

Characterization of SiN Integrated Optical Phased Arrays on a Wafer-Scale Test Station
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Characterization of SiN Integrated Optical Phased Arrays on a Wafer-Scale Test Station

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Si3N4 photonic integration platform at 1 µm for optical interconnects.

Xiaonan Hu, Marcello Girardi, Zhichao Ye

    Optics Express
    |May 15, 2020
    PubMed
    Summary

    A new silicon nitride platform enables high-capacity optical interconnects using single-mode Vertical-Cavity Surface-Emitting Lasers (VCSELs) at longer wavelengths. This technology is key for future data centers and advanced optical applications.

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    Area of Science:

    • Photonics and Optical Engineering
    • Materials Science
    • Data Center Technology

    Background:

    • Vertical-cavity surface-emitting lasers (VCSELs) are crucial for data center interconnects, typically using 850 nm GaAs-based multimode systems.
    • Recent advancements in single-mode VCSELs at wavelengths > 1 µm offer extended reach and low energy dissipation.

    Purpose of the Study:

    • To develop a passive platform for wavelength- and space-multiplexing compatible with >1 µm single-mode VCSELs.
    • To enable multi-terabit-per-second optical interconnect capacity for future data centers.

    Main Methods:

    • Fabrication of a passive silicon nitride (Si3N4) platform operating in the 1-µm band (1030-1075 nm).
    • Optimization of waveguide structure for single-mode operation and low bending radius.

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    Last Updated: Dec 21, 2025

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  • Demonstration of key photonic building blocks: arrayed waveguide gratings, Mach-Zehnder interferometers, splitters, and fiber interfaces.
  • Main Results:

    • Achieved an equivalent loss < 0.3 dB/cm in the Si3N4 platform, meeting high-capacity interconnect requirements.
    • Demonstrated simultaneous single-mode operation and low bending radius.
    • Successfully integrated various high-performance passive optical components.

    Conclusions:

    • The developed Si3N4 platform is the first of its kind in the 1-µm band for optical interconnects.
    • This technology can significantly scale VCSEL-based interconnect capacity and reduce footprint.
    • Potential for new applications in optical microscopy and nonlinear optics due to near-infrared transparency.