Related Experiment Video
Updated: Oct 8, 2026

Measurement of Quantum Interference in a Silicon Ring Resonator Photon Source
Published on: April 4, 2017
Co-design of a differential transimpedance amplifier and balanced photodetector for a sub-pJ/bit silicon photonics
Abstract:
This paper presents the design and implementation of a fully differential optical receiver, which is aimed for short reach intensity modulation and direct detection (IMDD) transceiver links. A Si-Ge balanced photodetector (PD) has been co-designed and packaged with a novel differential transimpedance amplifier (TIA). The TIA design is realized with a standard 28 nm CMOS process and operates with a standard digital supply (1V). Without using any equalization or DSP techniques, the proposed receiver can operate up to 54 Gb/s with a BER less than the KP4 limit (2.2×10-4) under an optical modulation amplitude (OMA) of -8.6 dBm, while the power efficiency has been optimized to 0.55 pJ/bit (0.98 pJ/bit if output buffer is included).
Related Concept Videos
Inverting and Non-inverting OpAmps
Cascaded Op Amps
In a cascaded system, each op-amp is referred to as a stage. The output of one stage drives the input of the subsequent stage. As the input signal passes through...
Biasing of P-N Junction
In equilibrium, no external voltage is applied across the p-n junction. The depletion region is formed at the junction interface due to the diffusion of carriers, which leaves behind charged dopants, acceptors on the p-side, and donors on the n-side. These immobile charges create an electric field that prevents further diffusion of carriers. The related energy band...
Diode: Forward bias
The behavior of a diode in forward bias...
Diode: Reverse bias

