High-Temperature Anomalous Hall Effect in a Transition Metal Dichalcogenide Ferromagnetic Insulator Heterostructure

Integration of transition metal dichalcogenides (TMDs) on ferromagnetic materials (FM) may yield fascinating physics and promise for electronics and spintronic applications. In this work, high-temperature anomalous Hall effect (AHE) in the TMD ZrTe₂ thin film using a heterostructure approach by depositing it on a ferrimagnetic insulator YIG (Y₃Fe₅O₁₂, yttrium iron garnet) is demonstrated. In this heterostructure, significant anomalous Hall effect can be observed at temperatures up to at least 400 K, which is a record high temperature for the observation of AHE in TMDs, and the large R_AHE is more than 1 order of magnitude larger than those previously reported values in topological insulators or TMD-based heterostructures. A complicated interface with additional ZrO₂ and amorphous YIG layers is actually observed between ZrTe₂ and YIG. The magnetization of interfacial reaction-induced ZrO₂ and YIG is believed to play a crucial role in the induced high-temperature AHE in the ZrTe₂. These results present a promising system for the spintronic device applications, and it may shed light on the designing approach to introduce magnetism to TMDs at room temperature.