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Honeycomb RhI3 Flakes with High Environmental Stability for Optoelectronics
Fakun Wang1, Zhuang Zhang2,3, Yue Zhang1
1State Key Laboratory of Material Processing and Die and Mould Technology, School of Material Sciences and Engineering, Huazhong University of Science and Technology, Wuhan, 430074, P. R. China.
Advanced Materials (Deerfield Beach, Fla.)
|May 19, 2020
Summary
Atomically thin Rhodium Triiodide (RhI3) exhibits excellent air and thermal stability. This new 2D material shows promise for advanced electronic and optoelectronic devices due to its semiconducting and photodetection properties.
Area of Science:
- Materials Science
- Condensed Matter Physics
- Nanotechnology
Background:
- Two-dimensional (2D) layered transition metal trihalides (MX3) are of significant interest due to their unique properties.
- Expanding the library of 2D MX3 materials is crucial for discovering new physical phenomena and functionalities.
Purpose of the Study:
- To investigate the optical, electrical, and photodetection properties of atomically thin Rhodium Triiodide (RhI3) flakes.
- To assess the potential of RhI3 as a material for 2D electronic and optoelectronic devices.
Main Methods:
- Exfoliation of atomically thin RhI3 flakes from bulk crystals.
- Characterization of material properties using techniques such as field-effect transistor measurements and photodetector fabrication.
- Analysis of thickness-dependent bandgap, semiconducting behavior, and photodetection performance.
Main Results:
- RhI3 flakes demonstrate superior air and thermal stability.
- A thickness-dependent bandgap was observed, ranging from 1.1 eV (18 layers) to 1.4 eV (2 layers).
- Field-effect transistors exhibited n-type semiconducting behavior with a mobility of 2.5 cm2 V-1 s-1 and an ON/OFF ratio of 4 × 10^4.
- RhI3 photodetectors showed high responsivity (11.5 A W-1) and specific detectivity (2 × 10^10 Jones) at room temperature under 980 nm illumination.
Conclusions:
- Atomically thin RhI3 is a stable 2D material with promising electronic and optoelectronic characteristics.
- The observed properties suggest significant potential for RhI3 in the development of next-generation 2D electronic and optoelectronic devices.
- Further research into RhI3 could unlock novel applications in various fields.

