Related Experiment Video
Updated: Dec 21, 2025

Characterization of Electrode Materials for Lithium Ion and Sodium Ion Batteries Using Synchrotron Radiation Techniques
Published on: November 11, 2013
High areal capacitance of manganese oxide electrodes with cerium as rare earth modification
Shengjian Jiao1,2, Dongfeng Xue1,2,3
1State Key Laboratory of Rare Earth Resource Utilization, Changchun Institute of Applied Chemistry, Chinese Academy of Sciences, Changchun 130022, People's Republic of China.
Abstract:
Manganese oxides have attracted wide attention as promising electrode materials for high-energy density supercapacitors. However, the electrochemical performance of the manganese oxide materials deteriorates considerably with the increase in mass loading due to their moderate electronic and ionic conductivities. This phenomenon leads to low areal capacitance, which limits the practical application of these materials. Herein, we perform a potentiostatic electrodeposition of manganese oxides with Ce as rare earth (RE) modification on a nickel (Ni) foam substrate to achieve high areal capacitance. Under optimum conditions, manganese oxide nanosheets are axially grown on Ni foam to form a hierarchically porous network nanostructure, which ensures facile ionic and electric transport. The Ce-modified manganese oxide with the Mn:Ce molar ratio of 1:0.1 yields an outstanding areal capacitance of 3.67 F cm-2 at 2 mA cm-2 and a good rate capability compared with the capacitance of 2.59 F cm-2 at 2 mA cm-2 of pure manganese oxide without the addition of Ce. This result verifies the importance of Ce modification to manganese oxides. Our results suggest the important role played by the RE element Ce in enhancing the electrochemical performance of high areal capacitance manganese oxide electrodes, which is essential to bringing them one step toward further practical applications.
More Related Videos
Related Concept Videos
MOS Capacitor
The metal gate is typically made from highly conductive materials such as aluminum or polysilicon. Beneath the metal gate lies a thin layer of...
Equivalent Capacitance
The following strategies are adopted to calculate...
Equivalent Capacitance

