Related Experiment Video
Updated: Dec 21, 2025

Developing High Performance GaP/Si Heterojunction Solar Cells
Published on: November 16, 2018
MAI Termination Favors Efficient Hole Extraction and Slow Charge Recombination at the MAPbI3/CuSCN Heterojunction
Jinlu He1, David Casanova2,3, Wei-Hai Fang1
1College of Chemistry, Key Laboratory of Theoretical & Computational Photochemistry of Ministry of Education, Beijing Normal University, Beijing 100875, P. R. China.
Abstract:
Photoinduced charge separation is the key step determining the efficiency of photon-to-electron conversion in solar cells, while charge carrier lifetimes govern the overall solar cell performance. Experiments report that copper(I) thiocyanate (CuSCN) is a very promising hole extraction layer for perovskite solar cells. Using nonadiabatic molecular dynamics combined with ab initio time-domain density functional theory, we show that termination of CH3NH3PbI3 (MAPbI3) at MAPbI3/CuSCN heterojunctions has a strong influence on both charge separation and recombination. Both processes are favored by MAI termination, compared to PbI2 termination. Because the MAPbI3 valence band originates from iodine orbitals while the conduction band arises from Pb orbitals, MAI termination places holes close to CuSCN, favoring extraction, and creates an MAI barrier for recombination of electrons in MAPbI3 and holes in CuSCN. The opposite is true for PbI2 termination. The origin of these effects is attributed solely to the properties of the MAPbI3 surfaces, and therefore, the conclusions should apply to other hole-transporting materials and can be generalized to other perovskites. Importantly, the simulations show that the injected hole remains hot for several hundreds of femtoseconds, allowing it to escape the interfacial region and prevent formation of bound excitons. This study suggests that metal halide perovskites should be treated with an organic precursor, such as MAI, prior to the formation of their interfaces with hole-transporting materials. The reported results advance the fundamental understanding of the highly unusual properties of metal halide perovskites and provide specific guidelines for optimizing the performance of perovskite solar cells and other devices.
Related Concept Videos
Metal-Semiconductor Junctions
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The...
P-N junction
Biasing of Metal-Semiconductor Junctions
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...
Carrier Generation and Recombination
This process is given by the generation rate G and is efficient due to the conservation of momentum between the valence band maximum and conduction band minimum.
Indirect generation involves an...
Biasing of P-N Junction
In equilibrium, no external voltage is applied across the p-n junction. The depletion region is formed at the junction interface due to the diffusion of carriers, which leaves behind charged dopants, acceptors on the p-side, and donors on the n-side. These immobile charges create an electric field that prevents further diffusion of carriers. The related energy band...

