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Updated: Dec 21, 2025
Fabrication of Spatially Confined Complex Oxides
Published on: July 1, 2013
Rational design principles for giant spin Hall effect in 5d-transition metal oxides
Priyamvada Jadaun1, Leonard F Register2, Sanjay K Banerjee2
1Department of Electrical and Computer Engineering, The University of Texas at Austin, Austin, TX 78712 priyamvada@utexas.edu.
Abstract:
Spin Hall effect (SHE), a mechanism by which materials convert a charge current into a spin current, invokes interesting physics and promises to empower transformative, energy-efficient memory technology. However, fundamental questions remain about the essential factors that determine SHE. Here, we solve this open problem, presenting a comprehensive theory of five rational design principles for achieving giant intrinsic SHE in transition metal oxides. Arising from our key insight regarding the inherently geometric nature of SHE, we demonstrate that two of these design principles are weak crystal fields and the presence of structural distortions. Moreover, we discover that antiperovskites are a highly promising class of materials for achieving giant SHE, reaching SHE values an order of magnitude larger than that reported for any oxide. Additionally, we derive three other design principles for enhancing SHE. Our findings bring deeper insight into the physics driving SHE and could help enhance and externally control SHE values.
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