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Area of Science:

  • Quantum Information Science
  • Materials Science
  • Solid-State Physics

Background:

  • Solid-state quantum emitters are crucial for quantum communication.
  • Existing emitters often lack emission in the telecom band required for fiber networks.
  • Vanadium dopants in silicon carbide (SiC) present a potential solution.

Purpose of the Study:

  • To create and characterize near-surface single vanadium dopants in SiC.
  • To investigate their emission properties in the telecom O-band.
  • To explore their potential for quantum communication applications.

Main Methods:

  • Fabrication and isolation of near-surface single vanadium dopants in SiC.
  • Characterization of optical emission spectra and brightness.
  • Analysis of d1 orbital physics across different SiC sites (4H-SiC and 6H-SiC).
  • Optically detected magnetic resonance (ODMR) for spin and hyperfine interaction studies.
  • Demonstration of coherent quantum control of spin states.

Main Results:

  • Achieved stable, narrow emission in the telecom O-band from single vanadium dopants in SiC.
  • Observed bright emission suitable for cavity-free detection.
  • Characterized complex d1 orbital physics and isotope-sensitive optical transitions.
  • Identified optically resolved nuclear spin registers and hyperfine interactions.
  • Demonstrated coherent quantum control of the vanadium spin state.

Conclusions:

  • Near-surface single vanadium dopants in SiC are promising telecom-band quantum emitters.
  • These emitters offer a viable platform for scalable quantum communication networks.
  • The observed properties pave the way for solid-state quantum memory applications.