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Polarization Beam Splitter Based on Si3N4/SiO2 Horizontal Slot Waveguides for On-Chip High-Power Applications.

Yuxi Fang1, Changjing Bao2, Zhonghan Wang1

  • 1Institute of Modern Optics, Nankai University, Tianjin 300350, China.

Sensors (Basel, Switzerland)
|May 24, 2020
PubMed
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We developed a silicon nitride/silicon dioxide horizontal-slot-waveguide polarization beam splitter (PBS) for high-power applications. This device offers efficient polarization splitting with low nonlinearity and improved coupling length.

Area of Science:

  • Photonics and Optical Engineering
  • Materials Science
  • Integrated Optics

Background:

  • On-chip optical systems require efficient polarization management, especially for high-power applications where nonlinearity is a concern.
  • Existing polarization beam splitters (PBSs) often face limitations in terms of device length, fabrication tolerance, or nonlinearity.
  • Silicon nitride (Si3N4) and silicon dioxide (SiO2) are promising materials for integrated photonics due to their low optical loss and nonlinearities.

Purpose of the Study:

  • To propose and analyze a novel Si3N4/SiO2 horizontal-slot-waveguide-based polarization beam splitter (PBS).
  • To achieve low nonlinearity for on-chip high-power optical systems.
  • To optimize the device for efficient polarization splitting and investigate design trade-offs.

Main Methods:

Keywords:
optical polarizationoptical waveguidesilicon nitridesilicon photonics

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  • Design and simulation of a horizontal-slot-waveguide structure using Si3N4 and SiO2.
  • Optimization of the coupling length ratio (L_TE/L_TM) to 2 for efficient polarization splitting.
  • Analysis of device performance, including extinction ratios (ER) and coupling lengths for both single-slot and multi-slot configurations.
  • Investigation of fabrication tolerance for achieving a target ER > 20 dB.

Main Results:

  • A single-slot Si3N4/SiO2 PBS achieved a coupling length of 281.5 μm with ERs of 23.9 dB (quasi-TM) and 20.8 dB (quasi-TE).
  • The proposed PBS exhibited a 22.6% shorter coupling length compared to Si3N4 strip waveguide-based PBSs.
  • A multi-slot design yielded a coupling length of 290.3 μm with ERs of 24.0 dB (quasi-TM) and 21.0 dB (quasi-TE).
  • The device demonstrated good fabrication tolerance for ER > 20 dB.

Conclusions:

  • The proposed Si3N4/SiO2 horizontal-slot-waveguide PBS is effective for efficient polarization splitting in high-power on-chip systems.
  • The design offers a reduced coupling length and good fabrication tolerance compared to conventional approaches.
  • The study highlights the trade-off between ER and coupling length, providing valuable insights for device optimization.