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Low Pressure Vapor-assisted Solution Process for Tunable Band Gap Pinhole-free Methylammonium Lead Halide Perovskite Films
Published on: September 8, 2017
Modeling of Electronic Mobilities in Halide Perovskites: Adiabatic Quantum Localization Scenario
Antoine Lacroix1, Guy Trambly de Laissardière2, Pascal Quémerais1
1Université Grenoble Alpes, CNRS, Institut NEEL, F-38042 Grenoble, France.
Abstract:
The transport properties of MAPbI3 are analyzed within a tight-binding model. We find a strong Fröhlich interaction of electron and holes with the electrostatic potential induced by the longitudinal optical phonon modes. This potential induces a strong scattering and limits the electronic mobilities at room temperature to about 200 cm^{2}/V s. With additional extrinsic disorder, a large fraction of the electrons and holes are localized, but they can diffuse by following nearly adiabatically the evolution of the electrostatic potential. This process of diffusion, at a rate which is given by the lattice dynamics, contributes to the unique electronic properties of this material.
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