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Deep Trench Isolation and Inverted Pyramid Array Structures Used to Enhance Optical Efficiency of Photodiode in CMOS

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  • 1Department of Mechanical Engineering, National Cheng Kung University, Tainan 701, Taiwan.

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This summary is machine-generated.

This study models backside-illuminated CMOS sensors, optimizing optical efficiency (OE) by adjusting deep trench isolation (DTI) and inverted pyramid array (IPA) pitch. Optimal configurations significantly enhance near-infrared performance up to 82.2%.

Keywords:
deep trench isolationinverted pyramid arraynear-infraredoptical efficiency

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Area of Science:

  • Semiconductor device physics
  • Optical engineering
  • Materials science

Background:

  • Backside-illuminated CMOS sensors are crucial for advanced imaging.
  • Optimizing optical efficiency (OE) is key for sensor performance across wavelengths.
  • Deep Trench Isolation (DTI) and Inverted Pyramid Array (IPA) structures influence photodiode performance.

Purpose of the Study:

  • To model and analyze the optical performance of backside-illuminated CMOS sensor photodiodes.
  • To investigate the impact of DTI depth and IPA pitch size on optical efficiency (OE).
  • To define and utilize a Growth Ratio (GR) to quantify performance improvements.

Main Methods:

  • Photodiode modeling for backside-illuminated CMOS sensors.
  • Analysis of optical performances across a wavelength range (300-1100 nm).
  • Parametric study of DTI depth and IPA pitch size (d) effects on OE and GR.

Main Results:

  • Increasing DTI depth monotonically enhances OE across all wavelengths.
  • Optimal IPA pitch (d) for maximum OE varies between visible and near-infrared (NIR) regions.
  • The study achieved up to an 82.2% maximum GR in the NIR region with optimized DTI and d.

Conclusions:

  • DTI depth and IPA pitch size are critical parameters for optimizing photodiode optical efficiency.
  • Tailoring DTI and IPA structures enables significant performance enhancements, particularly in the NIR spectrum.
  • The defined GR effectively quantifies the benefits of DTI + IPA structures for CMOS sensor design.