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Updated: Dec 20, 2025

Fabrication of Gate-tunable Graphene Devices for Scanning Tunneling Microscopy Studies with Coulomb Impurities
Published on: July 24, 2015
Imaging Andreev Reflection in Graphene
Sagar Bhandari1,2, Gil-Ho Lee3,4, Kenji Watanabe5
1School of Engineering and Applied Sciences, Harvard University, Cambridge, Massachusetts 02138, United States.
Abstract:
Coherent charge transport along ballistic paths can be introduced into graphene by Andreev reflection, for which an electron reflects from a superconducting contact as a hole, while a Cooper pair is transmitted. We use liquid-helium cooled scanning gate microscopy (SGM) to image Andreev reflection in graphene in the magnetic focusing regime, where carriers move along cyclotron orbits between contacts. Images of flow are obtained by deflecting carrier paths and displaying the resulting change in conductance. When electrons enter the superconductor, Andreev-reflected holes leave for the collecting contact. To test the results, we destroy Andreev reflection with a large current and by heating above the critical temperature. In both cases, the reflected carriers change from holes to electrons.

