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Related Experiment Video

Updated: Dec 20, 2025

Fabrication of Gate-tunable Graphene Devices for Scanning Tunneling Microscopy Studies with Coulomb Impurities
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Imaging Andreev Reflection in Graphene.

Sagar Bhandari1,2, Gil-Ho Lee3,4, Kenji Watanabe5

  • 1School of Engineering and Applied Sciences, Harvard University, Cambridge, Massachusetts 02138, United States.

Nano Letters
|June 3, 2020
PubMed
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This summary is machine-generated.

Andreev reflection in graphene enables coherent charge transport. Researchers imaged this phenomenon using scanning gate microscopy, observing reflected holes, which converted to electrons when Andreev reflection was disrupted.

Area of Science:

  • Condensed Matter Physics
  • Materials Science
  • Quantum Phenomena

Background:

  • Coherent charge transport in graphene is crucial for advanced electronic devices.
  • Andreev reflection, where an electron becomes a hole at a superconductor interface, facilitates this transport.
  • Visualizing Andreev reflection in graphene under specific conditions is key to understanding its properties.

Purpose of the Study:

  • To image and characterize Andreev reflection in graphene using scanning gate microscopy.
  • To investigate the behavior of charge carriers during Andreev reflection in a magnetic focusing setup.
  • To confirm the nature of reflected carriers (holes vs. electrons) under varying conditions.

Main Methods:

  • Utilized liquid-helium cooled scanning gate microscopy (SGM) to probe graphene.
Keywords:
Andreev reflectionballistic transportgraphenescanning gate microscope

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  • Employed the magnetic focusing regime, guiding carriers via cyclotron orbits.
  • Measured conductance changes induced by carrier path deflection to visualize charge flow.

    • Main Results:

    • Successfully imaged Andreev reflection in graphene, demonstrating coherent charge transport.
    • Observed that electrons entering the superconductor were reflected as holes towards the collector.
    • Destroying Andreev reflection (via high current or temperature) caused reflected carriers to become electrons.

    Conclusions:

    • Scanning gate microscopy effectively visualizes Andreev reflection in graphene.
    • The study confirms the conversion of reflected carriers from holes to electrons upon disruption of Andreev reflection.
    • Findings provide insights into controlling charge transport in graphene-superconductor systems.