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Updated: Dec 20, 2025

Silicon Metal-oxide-semiconductor Quantum Dots for Single-electron Pumping
Published on: June 3, 2015
Firing Performance of Microchip Exploding Foil Initiator Triggered by Metal-Oxide-Semiconductor Controlled Thyristor
Ke Wang1,2, Peng Zhu1,2, Cong Xu1,2
1School of Chemical Engineering, Nanjing University of Science and Technology, Nanjing 210094, China.
Abstract:
In this paper, microchip exploding foil initiators were fabricated by micro-electro-mechanical system scale fabrication methods, such as magnetron sputtering, photolithography, and chemical vapor deposition. A small-scale capacitor discharge unit based on the metal-oxide-semiconductor controlled thyristor was designed and produced to study the performance of the microchip exploding foil initiator. The discharge performance of the capacitor discharge unit without load and the effect of protection devices on the metal-oxide-semiconductor controlled thyristor were studied by the short-circuit discharge test. Then, the electric explosion characteristic of the microchip exploding foil initiator was also conducted to study the circuit current, peak power, deposited energy, and other parameters. Hexanitrostilbene refined by ball-milling and microfluidic technology was adopted to verify the initiation capability of the microchip exploding foil initiator triggered by the metal-oxide-semiconductor controlled thyristor. The results showed that the average inductance and resistance of the capacitor discharge circuit were 22.07 nH and 72.55 mΩ, respectively. The circuit peak current reached 1.96 kA with a rise time of 143.96 ns at 1200 V/0.22 μF. Hexanitrostilbene fabricated by ball-milling and microfluidic technology was successfully initiated at 1200 V/0.22 μF and 1100 V/0.22 μF, respectively.
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