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Updated: Dec 20, 2025

All-electronic Nanosecond-resolved Scanning Tunneling Microscopy: Facilitating the Investigation of Single Dopant Charge Dynamics
Published on: January 19, 2018
Jihao Wang1, Tao Geng1, Wenjie Meng1
1Anhui Province Key Laboratory of Condensed Matter Physics at Extreme Conditions, High Magnetic Field Laboratory and High Magnetic Field Laboratory of Anhui Province, Chinese Academy of Sciences, Hefei, Anhui 230031, China.
This study introduces a novel scanning tunneling microscope (STM) capable of operating in ultrahigh magnetic fields up to 27.5 Tesla. The developed STM achieves high stability and performance, enabling detailed imaging of materials under extreme conditions.
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