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A Metal-Oxide-Semiconductor (MOS) capacitor is a fundamental structure used extensively in semiconductor device technology, particularly in the fabrication of integrated circuits and MOSFETs (metal-oxide-semiconductor field-effect transistors). The MOS capacitor consists of three layers: a metal gate, a dielectric oxide, and a semiconductor substrate.
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Updated: Dec 20, 2025

Silicon Metal-oxide-semiconductor Quantum Dots for Single-electron Pumping

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Published on: June 3, 2015

A solid-state pulse generator based on multilayer ceramic capacitors and insulated gate bipolar transistors.

Li-Min Wang¹, Zheng-Quan Zhang¹, Qing-Xiang Liu¹

¹School of Physical Science and Technology, Southwest Jiaotong University, Chengdu 610031, China.

The Review of Scientific Instruments

|June 4, 2020

Summary

A novel solid-state pulse generator utilizing multilayer ceramic capacitors and an insulated gate bipolar transistor switch was developed. This compact, high-performance device offers a fast rise time and extended operational lifetime for advanced pulsed power applications.

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Area of Science:

Electrical Engineering
Pulsed Power Systems
Materials Science

Background:

Solid-state pulse generators are crucial for various applications requiring precise high-voltage pulses.
Existing technologies often face limitations in size, rise time, or operational lifespan.

Purpose of the Study:

To design and fabricate a compact, high-performance solid-state pulse generator.
To achieve a fast rise time and long operational lifetime using advanced components and design techniques.

Main Methods:

Designed a pulse-forming network (PFN) module using multilayer ceramic capacitors (MLCCs).
Fabricated an all-solid-state pulse generator with a Blumlein line, IGBT switch array, and optimized interstage inductors on PCBs.
Incorporated an IGBT gate-boosting circuit and magnetic switch technology for fast waveform generation.

Main Results:

Achieved a square-wave pulse with 5 kV voltage, 120 ns width, and 27 ns rise time.
Demonstrated a maximum repetition rate of 100 Hz and an evaluated lifetime of 10^9 pulses on a 6.6 Ω load.
The generator exhibited a compact structure with reduced interstage inductor coupling.

Conclusions:

The developed solid-state pulse generator offers a unique combination of compact size, fast rise time, and long lifetime.
This device is suitable for integration into linear transformer drivers or Marx generators.
The use of MLCCs and optimized design contributes to enhanced performance and reliability.