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A Standard and Reliable Method to Fabricate Two-Dimensional Nanoelectronics
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In-Plane Ferroelectric Tin Monosulfide and Its Application in a Ferroelectric Analog Synaptic Device

Ki Chang Kwon1,2, Yishu Zhang2, Lin Wang2

  • 1SZU-NUS Collaborative Center and International Collaborative Laboratory of 2D Materials for Optoelectronic Science & Technology, Engineering Technology Research Center for 2D Materials Information Functional Devices and Systems of Guangdong Province, College of Optoelectronic Engineering, Shenzhen University, Shenzhen 518060, China.

ACS Nano
|June 4, 2020
PubMed

Keywords:
artificial synapseferroelectricsneuromorphic computingtin monosulfidetwo-dimensional materials

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