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Updated: Dec 19, 2025

Fabrication of Flexible Image Sensor Based on Lateral NIPIN Phototransistors
Published on: June 23, 2018
Silicon nanomembrane phototransistor flipped with multifunctional sensors toward smart digital dust
Gongjin Li1, Zhe Ma2, Chunyu You1
1Department of Materials Science, State Key Laboratory of ASIC and Systems, Fudan University, Shanghai 200433, P. R. China.
Abstract:
The sensing module that converts physical or chemical stimuli into electrical signals is the core of future smart electronics in the post-Moore era. Challenges lie in the realization and integration of different detecting functions on a single chip. We propose a new design of on-chip construction for low-power consumption sensor, which is based on the optoelectronic detection mechanism with external stimuli and compatible with CMOS technology. A combination of flipped silicon nanomembrane phototransistors and stimuli-responsive materials presents low-power consumption (CMOS level) and demonstrates great functional expansibility of sensing targets, e.g., hydrogen concentration and relative humidity. With a device-first, wafer-compatible process introduced for large-scale silicon flexible electronics, our work shows great potential in the development of flexible and integrated smart sensing systems for the realization of Internet of Things applications.

