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Voltage- and temperature-dependent rare-earth dopant contribution to the interfacial magnetic anisotropy

Alejandro O Leon1, Gerrit E W Bauer2,3,4

  • 1Departamento de Física, Facultad de Ciencias Naturales, Matemática y del Medio Ambiente, Universidad Tecnológica Metropolitana, Las Palmeras 3360, Ñuñoa 780-0003, Santiago, Chile.

Journal of Physics. Condensed Matter : an Institute of Physics Journal
|June 5, 2020
PubMed

Keywords:
rare-earth anisotropyvoltagevoltage-controlled magnetic anisotropy

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