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A foundation for complex oxide electronics -low temperature perovskite epitaxy.

Henrik H Sønsteby1, Erik Skaar2, Øystein S Fjellvåg3

  • 1Department of Chemistry, Center for Materials Science and Nanotechnology, University of Oslo, Blindern, 0315, Oslo, Norway. henrik.sonsteby@kjemi.uio.no.

Nature Communications
|June 10, 2020
PubMed
Summary

Researchers developed a low-temperature atomic layer deposition method for highly conductive lanthanum nickelate (LaNiO3) thin films. This advance is crucial for developing next-generation all-oxide electronics and devices with novel functionalities.

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Area of Science:

  • Materials Science
  • Condensed Matter Physics
  • Nanotechnology

Background:

  • Traditional silicon electronics face fundamental limitations.
  • All-oxide electronics offer alternative functionalities and switching mechanisms.
  • Low-temperature synthesis routes are critical for complex oxide integration.

Purpose of the Study:

  • To develop a facile low-temperature synthesis route for lanthanum nickelate (LaNiO3) thin films.
  • To extend the materials toolbox for oxide electronics.
  • To enable the fabrication of advanced all-oxide electronic devices.

Main Methods:

  • Atomic layer deposition (ALD) at low temperatures.
  • Epitaxial growth of LaNiO3 films on SrTiO3 and LaAlO3 substrates.
  • Characterization of film properties, including electrical resistivity and carrier density.

Main Results:

  • Achieved highly electrically conductive LaNiO3 thin films via ALD at 225°C.
  • Films grew epitaxially on SrTiO3 and LaAlO3 without post-deposition annealing.
  • Resistivity below 100 µΩ cm and carrier densities up to 3.6 × 10^22 cm^-3 were observed.

Conclusions:

  • Demonstrated a significant advancement in low-temperature synthesis for oxide electronics.
  • Facilitated the realization of all-oxide electronics with enhanced functionalities.
  • LaNiO3 thin films produced by this method are promising for emerging technological devices.