Optothermotronic effect as an ultrasensitive thermal sensing technology for solid-state electronics

Area of Science:

• Solid-state electronics
• Nanotechnology
• Optoelectronics

Background:

• Thermal excitation and transport of charge carriers are crucial for high-performance sensing in solid-state electronics.
• Current sensing technologies face challenges in achieving optimal thermal detection and regulation.
• Nanoheterostructures offer potential for enhanced electronic properties and sensing capabilities.

Purpose of the Study:

• To introduce and demonstrate a novel optoelectronic coupling method, termed optothermotronics, for giant temperature sensing.
• To enhance thermal sensing performance in semiconductor nanofilms by manipulating charge carrier dynamics.
• To explore the potential of silicon carbide (SiC) nanofilms in optothermoelectronic temperature sensing.

Main Methods:

• Fabrication of SiC nanofilms on Si substrates to create nanoheterostructures.
• Application of nonuniform light illumination to create a charge carrier gradient.
• Coupling the charge carrier gradient with an electric tuning current to modulate thermal sensing.
• Characterization of the temperature sensing effect and performance enhancement.

Main Results:

• Demonstration of a giant temperature sensing effect in SiC nanofilms via optothermotronics.
• Enhancement of sensing performance by over 100 times through photon excitation.
• Achieved a giant temperature coefficient of resistance (TCR) of up to -50%/K.
• Successfully coupled light-induced charge carrier gradients with electric current for improved sensing.

Conclusions:

• Optothermotronics significantly enhances thermal sensing performance in semiconductor nanofilms.
• The developed method offers a substantial improvement over existing solid-state sensing technologies.
• This approach holds promise for advancing high-performance temperature sensing applications in electronics.