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Updated: Jul 1, 2026

Nanofabrication of Gate-defined GaAs/AlGaAs Lateral Quantum Dots
Published on: November 1, 2013
RGB Arrays for Micro-Light-Emitting Diode Applications Using Nanoporous GaN Embedded with Quantum Dots
Jin-Ho Kang1, Bingjun Li1, Tianshuo Zhao2,3
1Department of Electrical Engineering, Yale University, New Haven, Connecticut 06520, United States.
Abstract:
The multiple light scattering of nanoporous (NP) GaN was systematically studied and applied to the color down-conversion for micro-light-emitting diode (LED) display applications. The transport mean free path (TMFP) in NP GaN is 660 nm at 450 nm (light wavelength), and it decreases with a decreasing wavelength. It was observed that the short TMFP of the NP GaN increased the light extinction coefficient at 370 nm by 11 times. Colloidal QDs were loaded into a half 4″ wafer scale NP GaN, and 96 and 100% of light conversion efficiencies for green and red were achieved, respectively. By loading green and red QDs selectively into NP GaN mesas, we demonstrated the RGB microarrays based on the blue-violet pumping light with green and red color converting regions.

