Suppressing the Side Reaction by a Selective Blocking Layer to Enhance the Performance of Si-Based Anodes

Building a stable solid electrolyte interphase (SEI) is an effective method to enhance the performance of Si-based materials. However, the general strategy ignores the severe side reaction that originates from the penetration of the fluoride anion which influences the stability of the SEI. In this work, an analytical method is established to study the chemical reaction mechanism between the silicon and electrolyte by combining X-ray diffraction (XRD) with mass spectrometry (MS) technology. Additionally, a selective blocking layer coupling selectivity for the fluoride anion and a high conductivity is coated on the surface of silicon. With the protection of the selective blocking layer, the rate of the side reaction is decreased by 1700 times, and the corresponding SEI thickness is dwindled by 4 times. This work explores the mechanism of the intrinsic chemical reaction and provides future directions for improving Si-based anodes.