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Updated: Dec 18, 2025

Simulation, Fabrication and Characterization of THz Metamaterial Absorbers
Published on: December 27, 2012
Broadband Terahertz Near-Perfect Absorbers
Xiaomeng Cheng1, Rui Huang1, Jimmy Xu2
1State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Optoelectronic Science and Engineering, University of Electronic Science and Technology of China (UESTC), Chengdu 610054, P. R. China.
Abstract:
Broadband terahertz (THz) absorbers are highly desired in detection, modulation, receiving, and imaging devices. We report the design and successful implementation of a novel broadband THz metasurface with a near-perfect absorption. Different from the traditional metal/dielectric/metal three-layer structures, the as-designed THz absorber has one more metal layer and a dielectric spacer on top, both of which are 200 nm thick. Although the total thickness increased by ∼7%, the near-perfect THz absorption band significantly broadened by 4×, achieving a broadband absorption of 270 GHz. Broadband, polarization-insensitive, and near-perfect THz absorptions were also observed over wide incident angles in these meta-absorbers, where the electric field and power loss were mainly concentrated in the additional thin dielectric layer. Such a broadband THz absorption was achieved through electromagnetic coupling between the top and middle metal layers and the resultant overlapping of the resonance frequencies. This strategy can be adapted to other spectrum-shaping devices.
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