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Strain mapping inside an individual processed vertical nanowire transistor using scanning X-ray nanodiffraction
Dmitry Dzhigaev1, Johannes Svensson2, Abinaya Krishnaraja2
1Division of Synchrotron Radiation Research and NanoLund, Department of Physics, Lund University, P.O. Box 118, SE-221 00 Lund, Sweden. dmitry.dzhigaev@sljus.lu.se.
Nanoscale
|June 13, 2020
Summary
Strain in semiconductor nanowires impacts electronic device performance. This study maps strain in GaSb-InAs nanowire transistors using X-ray nanodiffraction, revealing tensile strain up to 0.26% and linking it to fabrication parameters.
Area of Science:
- Materials Science
- Condensed Matter Physics
- Nanotechnology
Background:
- Semiconductor nanowires in gate-all-around transistor geometries are crucial for next-generation electronics.
- Nanodevice fabrication introduces strain from surrounding dielectric and metal layers, impacting performance.
- Non-destructive characterization of strain in complete, complex nanodevices is essential.
Purpose of the Study:
- To perform direct, nanoscale strain mapping within heterostructured GaSb-InAs nanowire tunnel field-effect transistors.
- To investigate the influence of metal gate layers on embedded nanowire strain.
- To establish a correlation between fabrication parameters and the resulting strain state.
Main Methods:
- Fast scanning X-ray nanodiffraction was employed for direct strain mapping.
- Finite element method simulations were used to model strain distribution.
- Characterization focused on individual nanowires with diameters down to 40 nm within HfO2, W, and organic spacer layers.
Main Results:
- Tensile strain up to 0.26% was measured in the p-type GaSb segment of the nanowire transistor.
- The effect of a 10 nm Tungsten (W) gate layer on strain was quantified.
- A direct relationship was established between Argon (Ar) pressure during W deposition and nanowire strain.
Conclusions:
- Fabrication-induced strain in nanowire transistors can be precisely mapped and correlated with process parameters.
- Understanding and controlling strain is vital for optimizing the performance of advanced nanoelectronic devices.
- Advancements in synchrotron X-ray sources enable high-throughput measurements on realistic nanoelectronic devices.
