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Ohmic Contact Fabrication Using a Focused-ion Beam Technique and Electrical Characterization for Layer Semiconductor Nanostructures
Published on: December 5, 2015
Intrinsic ferromagnetic semiconductivity realized in a new MoS2 monolayer
1Hefei National Laboratory for Physical Sciences at the Microscale and Synergetic Innovation Center of Quantum Information & Quantum Physics, University of Science and Technology of China, Hefei, Anhui 230026, China. x.deng@hynu.edu.cn.
Abstract:
Magnetic semiconductors, with semiconductivity and ferromagnetism simultaneously, have promising important applications as storage devices. However, the ordered ferromagnetic state easily suffers from enhanced thermal fluctuation, inducing a very small Curie temperature. Here we have successfully predicted a new 2D small-gap MoS2 magnetic semiconductor. Instead, almost all of the reported MoS2 phase was nonmagnetic whether it exhibited semiconducting or metal behavior. Monte Carlo simulations showed that its Curie temperature could approach 130 K and could be further enhanced through applying biaxial tensile strain. The revealed atomic bonding pattern paves a new way to explore novel electronic and magnetic materials.
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