Multi-Bit Biomemory Based on Chitosan: Graphene Oxide Nanocomposite with Wrinkled Surface

Area of Science:

• Materials Science
• Biomaterials Engineering
• Nanotechnology

Background:

• Chitosan (CS) is an abundant, biocompatible polysaccharide with potential for biomaterial applications.
• Resistive-switching memory (RRAM) is a key technology for next-generation electronic devices.
• Developing environmentally friendly and biodegradable electronic materials is a growing research focus.

Purpose of the Study:

• To develop an environmentally friendly multi-bit biomemory device using chitosan.
• To investigate the resistive-switching properties of a chitosan-graphene oxide composite.
• To explore the potential of chitosan-based materials for biodegradable electronics.

Main Methods:

• Fabrication of an indium tin oxide (ITO)/CS:GO/Ni device using a solution-processable method.
• Incorporation of graphene oxide (GO) into a chitosan (CS) matrix.
• Characterization of the device's electrical properties, including resistance states and switching voltages.

Main Results:

• Successful achievement of a multi-bit biomemory based on chitosan.
• The CS:GO composite device exhibited distinct high, intermediate, and low resistance states.
• The device demonstrated a high current ratio and low SET/RESET voltage.

Conclusions:

• Graphene oxide (GO) likely acts as trapping sites, enabling the biomemory mechanism.
• This research presents a novel, eco-friendly approach for chitosan-based biodegradable electronics.
• The developed biomemory device offers a sustainable alternative for electronic applications.