Related Experiment Video
Updated: Dec 18, 2025

Optimized Fabrication Procedure for High-Quality Graphene-based Moiré Superlattice Devices
Published on: July 11, 2025
Strong dependence of the vertical charge carrier mobility on the π-π stacking distance in molecule/graphene
Wei Hao1, Yishan Wang2, Hu Zhao3
1School of Materials Science and Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore 639798, Singapore. lisz@ntu.edu.sg.
Abstract:
Due to mechanical flexibility and low cost, heterojunctions consisting of graphene and small organic molecules are regarded as promising candidate materials for vertical organic field-effect transistors (VOFETs), where the charge carrier mobility perpendicular to the graphene plane is crucial to their performance. Herein, through density functional simulations, we find that the vertical charge carrier mobility of the heterojunctions can be greatly adjusted by tuning their π-π stacking distances. For the 6,13-dichloropentacene (DCP)/graphene heterojunctions, with the distance between the first DCP layer and graphene decreasing to below 2.4 Å, the vertical electron mobility between DCP layers is improved dramatically while the vertical hole mobility is greatly reduced. The strong dependence of vertical charge carrier mobility on the distance between the first molecular layer and substrate for smaller values than the typical π-π stacking distance (3.3-3.8 Å) was also observed in the perylenetetracarboxylic dianhydride (PTCDA)/graphene and DCP/hexagonal-BN heterojunctions, where the tendency is very different to that of the DCP/graphene heterojunction. Our simulation results enabled us to develop a new strategy to tune the vertical charge transport properties in molecule/graphene heterojunctions, which provides insights into developing efficient VOFETs.
Related Concept Videos
π Electron Effects on Chemical Shift: Overview
P-N junction
π Molecular Orbitals of 1,3-Butadiene
The simplest conjugated diene is 1,3-butadiene: a four-carbon system where each carbon is sp2-hybridized and has an unhybridized p orbital that contains an unpaired electron. According to molecular orbital theory, atomic orbitals combine to form molecular orbitals such that the number...
Metal-Semiconductor Junctions
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The...
Molecular Orbital Theory II
Carrier Transport
Drift Current:
The drift of charge carriers is started by an external electric field (E). Charged particles, such as electrons and holes, experience an acceleration between collisions with lattice atoms. For electrons, this results in a drift velocity (vd) given by:

