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Trap-related frequency dispersion of zero-bias microwave responsivity at low temperature in GaN-based self-switching

E Pérez-Martín1, T González1, D Vaquero2

  • 1Applied Physics Department, University of Salamanca, Plaza de la Merced s/n, 37008 Salamanca, Spain.

Nanotechnology
|June 17, 2020
PubMed

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