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Polar Rectification Effect in Electro-Fatigued SrTiO3-Based Junctions
Xueli Xu1,2,3, Hui Zhang4,5, Zhicheng Zhong6
1Anhui Province Key Laboratory of Condensed Matter Physics at Extreme Conditions, High Magnetic Field Laboratory, Chinese Academy of Science, Hefei 230031, China.
ACS Applied Materials & Interfaces
|June 20, 2020
Summary
This study demonstrates polar rectification in fatigued strontium titanate (fSTO) using oxygen vacancies (OVs). This novel approach enables unidirectional electric polarization, paving the way for new electronic devices.
Area of Science:
- Materials Science
- Condensed Matter Physics
- Solid-State Electronics
Background:
- Rectifying semiconductor junctions are fundamental components in electronic devices, enabling current flow control.
- Oxygen vacancies (OVs) are known to influence the electronic properties of oxides like strontium titanate (STO).
Purpose of the Study:
- To demonstrate polar rectification in a Ti/fatigued-SrTiO3 (fSTO) Schottky junction.
- To investigate the role of localized oxygen vacancies in achieving unidirectional electric polarization.
Main Methods:
- Producing fatigued SrTiO3 (fSTO) with oxygen vacancies via an electrodegradation process.
- Fabricating a Ti/fSTO Schottky junction to study rectification properties.
- Analyzing the interplay between localized OVs, itinerant electrons, and electric fields.
Main Results:
- Demonstrated a novel polar rectification mechanism in the Ti/fSTO Schottky junction.
- Observed unidirectional electric polarization at the junction interface due to differential mobility of OVs and electrons.
- Identified a pre-ferroelectric state in fSTO with three sub-states, easily switchable to a ferroelectric state.
Conclusions:
- The findings present a new paradigm for rectification based on polar effects rather than solely electron transport.
- The tunable pre-ferroelectric state of fSTO offers potential for advanced polar electronic devices.
- This work may underpin novel electronic phenomena triggered by polar effects.
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