Search research articles

ABOUT JoVE

Overview Leadership Blog JoVE Help Center

AUTHORS

Publishing Process Editorial Board Scope & Policies Peer Review FAQ Submit

LIBRARIANS

Testimonials Subscriptions Access Resources Library Advisory Board FAQ

RESEARCH

JoVE Journal Methods Collections JoVE Encyclopedia of Experiments Archive

EDUCATION

JoVE Core JoVE Business JoVE Science Education JoVE Lab Manual Faculty Resource Center Faculty Site

Terms & Conditions of Use

Related Concept Videos

P-N junction

P-N junction

A p-n junction is formed when p-type and n-type semiconductor materials are joined together. At the interface of the p-n junction, holes from the p-side and electrons from the n-side begin to diffuse into the opposite sides due to the concentration gradient. This diffusion of carriers leads to a region around the junction where there are no free charge carriers, known as the depletion region. The charge density within the depletion region for the n-side and p-side can be described by the...

You might also read

Related Articles

Articles linked to this work by shared authors, journal, and citation graph.

Sort by

Same author

Observation of Kondo cloud-coupling in a mirror-symmetric carbon nanotube array-molybdenum structure.

Nature communications·2026

Same author

Nanocavity-Based "Turn-Off" Plasmonic Metasurface Sensing Platform for the Detection of Trace Cadmium Ions in Complex Matrices.

ACS sensors·2026

Same author

Creation of new rice germplasm with cross-resistance to auxin herbicides picloram and dicamba by genome editing of OsAFB4.

TAG. Theoretical and applied genetics. Theoretische und angewandte Genetik·2025

Same author

A Two-Step Method for Impact Source Localization in Operational Water Pipelines Using Distributed Acoustic Sensing.

Sensors (Basel, Switzerland)·2025

Same author

Multistate Reconfigurable Structural Color Enabled by an Antimony Trisulfide Nanograting.

ACS applied materials & interfaces·2025

Same author

CRISPR/Cas9-mediated editing of barley lipoxygenase genes promotes grain fatty acid accumulation and storability.

GM crops & food·2025

Search research articles

Related Experiment Video

Updated: Dec 17, 2025

Monovalent Cation Doping of CH3NH3PbI3 for Efficient Perovskite Solar Cells

Monovalent Cation Doping of CH3NH3PbI3 for Efficient Perovskite Solar Cells

Published on: March 19, 2017

Extremely Low Program Current Memory Based on Self-Assembled All-Inorganic Perovskite Single Crystals.

Jia Liu^1,2, Jiyou Jin^1,2, Zhu Yang¹

¹CAS Key Laboratory of Nanosystem and Hierarchical Fabrication, CAS Center for Excellence in Nanoscience, National Center for Nanoscience and Technology, Beijing 100190, China.

ACS Applied Materials & Interfaces

|June 23, 2020

Summary

This study presents a low-power resistance switching memory device using single-crystalline CsPbBr₃. The device achieves high performance with minimal power consumption, overcoming limitations of polycrystalline perovskite memory.

Keywords:

Kelvin probe force microscopy conductive atomic force microscopy low power perovskite resistive switching random-access memory single crystal

More Related Videos

Low Pressure Vapor-assisted Solution Process for Tunable Band Gap Pinhole-free Methylammonium Lead Halide Perovskite Films

Low Pressure Vapor-assisted Solution Process for Tunable Band Gap Pinhole-free Methylammonium Lead Halide Perovskite Films

Published on: September 8, 2017

A Fabrication and Measurement Method for a Flexible Ferroelectric Element Based on Van Der Waals Heteroepitaxy

A Fabrication and Measurement Method for a Flexible Ferroelectric Element Based on Van Der Waals Heteroepitaxy

Published on: April 8, 2018

Related Experiment Videos

Last Updated: Dec 17, 2025

Monovalent Cation Doping of CH3NH3PbI3 for Efficient Perovskite Solar Cells

Monovalent Cation Doping of CH3NH3PbI3 for Efficient Perovskite Solar Cells

Published on: March 19, 2017

Low Pressure Vapor-assisted Solution Process for Tunable Band Gap Pinhole-free Methylammonium Lead Halide Perovskite Films

Low Pressure Vapor-assisted Solution Process for Tunable Band Gap Pinhole-free Methylammonium Lead Halide Perovskite Films

Published on: September 8, 2017

A Fabrication and Measurement Method for a Flexible Ferroelectric Element Based on Van Der Waals Heteroepitaxy

A Fabrication and Measurement Method for a Flexible Ferroelectric Element Based on Van Der Waals Heteroepitaxy

Published on: April 8, 2018

Area of Science:

Materials Science
Solid-State Physics
Electronic Engineering

Background:

Lead halide perovskites are promising for memory devices due to unique hysteresis.
Polycrystalline perovskites exhibit high power consumption from grain boundary leakage currents.
Developing low-power, high-performance memory is crucial for advanced electronics.

Purpose of the Study:

To demonstrate a low-power resistance switching random-access memory (RRAM) device.
To investigate the use of single-crystalline CsPbBr₃ for improved memory performance.
To understand the mechanism behind the resistive switching effect.

Main Methods:

Assembling single-crystalline CsPbBr₃ on silver (Ag) electrodes.
Characterizing the device's electrical properties, including program current, endurance, data retention, and on/off ratio.
Analyzing the formation and annihilation of conductive filaments.

Main Results:

A bipolar nonvolatile RRAM device with low program current (∼10 nA) and low power consumption (∼3 × 10^-8 W) was achieved.
The device demonstrated good endurance, long data retention (>10³ S), and a large on/off ratio (∼10³).
The resistive switching is attributed to the formation and annihilation of Ag and bromide vacancy conductive filaments, which are cone-shaped.

Conclusions:

Single-crystalline CsPbBr₃ is a viable material for developing highly efficient, low-power RRAM devices.
The use of single crystals effectively suppresses leakage currents, leading to reduced power consumption.
The findings pave the way for next-generation memory technologies with enhanced energy efficiency.