Search research articles

ABOUT JoVE

Overview Leadership Blog JoVE Help Center

AUTHORS

Publishing Process Editorial Board Scope & Policies Peer Review FAQ Submit

LIBRARIANS

Testimonials Subscriptions Access Resources Library Advisory Board FAQ

RESEARCH

JoVE Journal Methods Collections JoVE Encyclopedia of Experiments Archive

EDUCATION

JoVE Core JoVE Business JoVE Science Education JoVE Lab Manual Faculty Resource Center Faculty Site

Terms & Conditions of Use

Related Concept Videos

Bipolar Junction Transistor

Bipolar Junction Transistor

Bipolar Junction Transistors (BJTs) are essential elements in electronic circuits, playing a crucial role in the functionality of amplifiers, memories, and microprocessors. These transistors can be designed as NPN or PNP based on their doping patterns. They consist of three layers: the emitter, base, and collector. The configuration of these layers and their respective doping levels—with N-type or P-type impurities—define the transistor's type and its operational...

Field Effect Transistor

Field Effect Transistor

Field-effect transistors (FETs) are integral to electronic circuits and distinguished by their three-terminal setup: the gate, drain, and source. These transistors operate as unipolar devices, which utilize either electrons or holes as charge carriers, in contrast to bipolar transistors, which use both types of carriers. The primary function of the FET is to modulate the flow of these carriers from the source to the drain through a channel. The voltage difference between the gate and source...

MOSFET

MOSFET

The Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) plays a pivotal role in modern electronics thanks to its versatility and efficiency in controlling electrical currents. This device, also known as IGFET, MISFET, and MOSFET, has three main terminals: the Source, Drain, and Gate. MOSFETs are classified into n-channel or p-channel types based on the doping characteristics of their substrate and the source or drain regions.
In an n-MOSFET, the structure includes n-type source and drain...

Biasing of FET

Biasing of FET

Biasing a Junction Field Effect Transistor (JFET) is crucial for setting operational parameters and ensuring efficient functioning in electronic circuits. JFETs are characterized by using a single carrier type in N-channel or P-channel configurations, where the channel is surrounded by PN junctions. These junctions are central to the device's ability to control current flow.
In an N-channel JFET, the structure consists of N-type material forming the channel on a P-type substrate, with the...

Working Principle of BJT

Working Principle of BJT

A Bipolar Junction Transistor (BJT), specifically a PNP transistor in a common-base configuration, effectively amplifies or switches electronic signals by controlling the flow of charge carriers. This discussion focuses on its operation in the active mode.
In the PNP configuration, the emitter is heavily doped with positive charge carriers (holes), while the base is lightly doped with negative carriers (electrons). This setup allows for a forward bias across the emitter-base junction,...

Types of Semiconductors

Types of Semiconductors

Intrinsic semiconductors are highly pure materials with no impurities. At absolute zero, these semiconductors behave as perfect insulators because all the valence electrons are bound, and the conduction band is empty, disallowing electrical conduction. The Fermi level is a concept used to describe the probability of occupancy of energy levels by electrons at thermal equilibrium. In intrinsic semiconductors, the Fermi level is positioned at the midpoint of the energy gap at absolute zero. When...

You might also read

Related Articles

Articles linked to this work by shared authors, journal, and citation graph.

Sort by

Same author

Serum levels of SIRT3 in elderly patients undergoing general anesthesia and its relationship with postoperative delirium.

Open medicine (Warsaw, Poland)·2026

Same author

Burden and Regional Disparities of MASH-Related Liver Cancer in the Asia-Pacific Region From 1990 to 2023.

Liver international : official journal of the International Association for the Study of the Liver·2026

Same author

Ion-modulated oxide-based neuromorphic transistors for spatiotemporal information processing.

Materials horizons·2026

Same author

A Library of Dipolar Skyrmion Bags Observed in a Centrosymmetric van der Waals Magnet.

Advanced materials (Deerfield Beach, Fla.)·2026

Same author

Proanthocyanidins Alleviate T-2 Toxin-Induced Toxicity in Yak (<i>Bos grunniens</i>) Sertoli Cells by Alleviating Oxidative Stress and Modulating Mitochondrial Biogenesis.

Antioxidants (Basel, Switzerland)·2026

Same author

Effects of dietary phytic acid on growth, antioxidant status, hepatic metabolism, and immune-related gene expression in Nile tilapia (Oreochromis niloticus).

Fish physiology and biochemistry·2026

Search research articles

Related Experiment Video

Updated: Dec 17, 2025

All-electronic Nanosecond-resolved Scanning Tunneling Microscopy: Facilitating the Investigation of Single Dopant Charge Dynamics

All-electronic Nanosecond-resolved Scanning Tunneling Microscopy: Facilitating the Investigation of Single Dopant Charge Dynamics

Published on: January 19, 2018

Versatile Triboiontronic Transistor via Proton Conductor.

Xixi Yang^1,2,3, Jing Han^1,2, Jinran Yu^1,2

¹Beijing Institute of Nanoenergy and Nanosystems, Chinese Academy of Sciences, Beijing 100083, China.

|June 23, 2020

Summary

This study demonstrates a novel MoS2 transistor using proton conductors for advanced iontronics. The device leverages mechanical energy to control electrical properties, enabling applications in artificial intelligence and self-powered electronics.

Keywords:

logic inverter proton conductor sensory neuron triboelectric nanogenerator triboiontronic transistor

More Related Videos

Electric-field Control of Electronic States in WS2 Nanodevices by Electrolyte Gating

Electric-field Control of Electronic States in WS2 Nanodevices by Electrolyte Gating

Published on: April 12, 2018

Translating Extracellular Electron Transfer Activities with Organic Electrochemical Transistors

Translating Extracellular Electron Transfer Activities with Organic Electrochemical Transistors

Published on: January 31, 2025

Related Experiment Videos

Last Updated: Dec 17, 2025

All-electronic Nanosecond-resolved Scanning Tunneling Microscopy: Facilitating the Investigation of Single Dopant Charge Dynamics

All-electronic Nanosecond-resolved Scanning Tunneling Microscopy: Facilitating the Investigation of Single Dopant Charge Dynamics

Published on: January 19, 2018

Electric-field Control of Electronic States in WS2 Nanodevices by Electrolyte Gating

Electric-field Control of Electronic States in WS2 Nanodevices by Electrolyte Gating

Published on: April 12, 2018

Translating Extracellular Electron Transfer Activities with Organic Electrochemical Transistors

Translating Extracellular Electron Transfer Activities with Organic Electrochemical Transistors

Published on: January 31, 2025

Area of Science:

Materials Science
Nanotechnology
Electronics

Background:

Iontronics utilize electric double layers (EDLs) and ionic migration for electronic modulation.
Proton conductors offer fast ion migration and high EDL capacitance for enhanced performance.

Purpose of the Study:

To demonstrate a versatile triboiontronic MoS2 transistor using a proton conductor.
To explore the combination of triboelectric modulation and proton migration for device control.

Main Methods:

Fabrication of a MoS2 transistor integrated with a proton conductor.
Utilizing triboelectric potential from mechanical displacement to modulate transistor properties.
Conducting noise tests to validate device performance and rule out interference.

Main Results:

Achieved high current on/off ratio (>10^6) and low cutoff current (~0.04 pA).
Demonstrated steep switching properties (89 μm/dec).
Successfully applied the device for logic operations and an artificial sensory neuron system.

Conclusions:

Established reliable triboelectric potential modulation of electronic transport via protonic dielectrics.
The developed triboiontronic transistor shows potential for mechanosensation, self-powered devices, and AI applications.