Low-Voltage Domain-Wall LiNbO₃ Memristors

Area of Science:

• Materials Science
• Condensed Matter Physics
• Nanotechnology

Background:

• Ferroelectric domain walls (DWs) offer potential for novel resistive switching devices.
• Conventional methods rely on controlling DW density, which is energy-intensive due to high leakage currents.
• A need exists for energy-efficient resistance control in ferroelectric devices.

Purpose of the Study:

• To demonstrate a new approach for resistive switching by tuning the intrinsic conductivity of DWs.
• To investigate the energy-efficient control of resistance in LiNbO3 capacitors with graphene.
• To explore applications in multilevel memories and neuromorphic computing.

Main Methods:

• Utilized LiNbO3 capacitors integrated with graphene electrodes.
• Applied subcoercive voltage to tune the conductivity of existing DWs.
• Investigated the reversible transition between conducting and insulating states of DWs.

Main Results:

• Demonstrated continuous resistance tuning in a polydomain state device.
• Achieved resistance modulation without altering the domain structure.
• Showcased an energy-efficient mechanism for resistance control.

Conclusions:

• Tuning DW conductivity offers an energy-efficient alternative to domain rearrangement for resistive switching.
• The developed approach is suitable for creating advanced memristive devices.
• Promising for applications in multilevel data storage and neuromorphic computing architectures.