Homogeneous 2D MoTe₂ CMOS Inverters and p-n Junctions Formed by Laser-Irradiation-Induced p-Type Doping

Among all typical transition-metal dichalcogenides (TMDs), the bandgap of α-MoTe₂ is smallest and is close to that of conventional 3D Si. The properties of α-MoTe₂ make it a favorable candidate for future electronic devices. Even though there are a few reports regarding fabrication of complementary metal-oxide-semiconductor (CMOS) inverters or p-n junction by controlling the charge-carrier polarity of TMDs, the fabrication process is complicated. Here, a straightforward selective doping technique is demonstrated to fabricate a 2D p-n junction diode and CMOS inverter on a single α-MoTe₂ nanoflake. The n-doped channel of a single α-MoTe₂ nanoflake is selectively converted to a p-doped region via laser-irradiation-induced MoO_x doping. The homogeneous 2D MoTe₂ CMOS inverter has a high DC voltage gain of 28, desirable noise margin (NM_H = 0.52 V_DD , NM_L = 0.40 V_DD ), and an AC gain of 4 at 10 kHz. The results show that the doping technique by laser scan can be potentially used for future larger-scale MoTe₂ CMOS circuits.