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High Anti-Interference Ti₃C₂T MXene Field-Effect-Transistor-Based Alkali Indicator.

Chengbin Liu^1,2, Sibei Hao^1,2, Xiaoyan Chen^1,2

¹College of Environmental Science and Engineering, Biomedical Multidisciplinary Innovation Research Institute, Shanghai East Hospital, State Key Laboratory of Pollution Control and Resource Reuse, Tongji University, 1239 Siping Road, Shanghai 200092, China.

ACS Applied Materials & Interfaces

|June 26, 2020

Summary

This study introduces a new field-effect transistor (FET) using titanium carbide (Ti3C2) MXene for detecting alkali ions. The MXene FET demonstrates rapid, sensitive alkali detection, even in high-salinity conditions.

Area of Science:

Materials Science
Nanotechnology
Electrochemistry

Background:

MXenes are 2D transition metal carbides/nitrides with unique properties.
Their stability and performance in alkaline media are largely unexplored.
Alkali detection is crucial for various environmental and industrial applications.

Purpose of the Study:

To fabricate and characterize a field-effect transistor (FET) based on Ti3C2 MXene for alkali detection.
To evaluate the MXene FET's response in different ionic strengths and environments.
To understand the structural changes in Ti3C2 MXene upon alkali exposure.

Main Methods:

Fabrication of a field-effect transistor (FET) using single/double-layer Ti3C2 MXene.
Testing the FET's response to alkali ions in varying concentrations and salinity.
In situ morphological image evolution studies to observe structural changes.

Main Results:

The Ti3C2 MXene FET exhibited a fast (∼1 s), sensitive, and selective response to alkali.
The device maintained functionality in a high-salinity (2 M NaCl) environment, indicating high anti-interference capabilities.
Alkali-induced denaturation of Ti3C2 MXene nanosheets was identified as the mechanism behind the response signal.

Conclusions:

Ti3C2 MXene can be effectively utilized as an alkali indicator in FET devices.
The developed MXene-based FET shows promise for applications in high-ionic-strength alkaline environments.
Understanding alkali-induced structural evolution is key for advancing MXene-based FET applications.

Keywords:

Ti3C2Tx MXene alkali indicator field-effect transistor high anti-interference sensing in situ morphological image evolution

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