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Updated: Dec 17, 2025
08:12
Low Pressure Vapor-assisted Solution Process for Tunable Band Gap Pinhole-free Methylammonium Lead Halide Perovskite Films
Published on: September 8, 2017
9.9K
High-Performance and Reliable Lead-Free Layered-Perovskite Transistors
Huihui Zhu1, Ao Liu1, Kyu In Shim2
1Department of Chemical Engineering, Pohang University of Science and Technology, 77 Cheongam-Ro, Nam-Gu, Pohang, 37673, Republic of Korea.
Advanced Materials (Deerfield Beach, Fla.)
|June 26, 2020
Summary
This study presents methods for high-performance lead-free perovskite thin-film transistors (TFTs). These techniques improve reproducibility and performance, enabling the first perovskite complementary inverter.
Area of Science:
- Materials Science
- Electronics
- Semiconductor Physics
Background:
- Perovskites are widely used in solar cells and LEDs, but their potential in thin-film transistors (TFTs) is underexplored.
- Perovskite materials possess high intrinsic charge carrier mobility, making them promising for advanced electronic applications.
Purpose of the Study:
- To develop universal approaches for high-performance and reliable p-channel lead-free phenethylammonium tin iodide TFTs.
- To demonstrate the feasibility of perovskite-based complementary inverters.
Main Methods:
- Utilized self-passivation of grain boundaries using excess phenethylammonium iodide.
- Controlled grain crystallization through adduct formation.
- Passivated iodide vacancies via oxygen treatment.
Main Results:
- Achieved increased TFT reproducibility and reliability through grain boundary passivation.
- Enhanced TFT performance by increasing grain size.
- Demonstrated the first perovskite-based complementary inverter using n-channel indium gallium zinc oxide TFTs.
- The inverter achieved a high gain (>30) and excellent noise margin.
Conclusions:
- Developed widely applicable and repeatable methods for high-performance printed perovskite TFTs.
- Paved the way for further research and development in perovskite-based electronics.
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