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The Role of Ferroelectric Polarization in Resistive Memory Properties of Metal/Insulator/Semiconductor Tunnel

Yihao Yang1, Ming Wu2,3, Xiaofei Li1

  • 1College of Physics and Center for Marine Observation and Communications, Qingdao University, Qingdao 266071, China.

ACS Applied Materials & Interfaces
|June 27, 2020
PubMed

Keywords:
Schottky barrierdiffusionferroelectric tunnel junctionsnonvolatile memoriesresistance switchingretention

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