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Fabrication of Gate-tunable Graphene Devices for Scanning Tunneling Microscopy Studies with Coulomb Impurities
Published on: July 24, 2015
Distinguishing strain, charge and molecular orbital induced effects on the electronic structure: graphene/ammonia
1Department of Physics, Indian Institute of Technology Bhilai, GEC Campus, 492015, Raipur, India.
Abstract:
Molecular adsorption at the surface of a two-dimensional material poses numerous questions regarding the modification to the band structure and interfacial states, which of course deserve full attention. In line with this, first principles density functional theory is employed on a graphene/ammonia system. We identify the effects on the band structure due to strain, charge transfer and presence of molecular orbitals (MOs) of NH3for six adsorption configurations. Induced-strain upon ammonia-adsorption opens the band gap (Eg) of graphene due to the breaking of translational symmetry. The charge transfer/MOs of NH3shifts the equilibrium Fermi energy (EF). TheEgandEFvalues and charge density distribution are dependent on the adsorption configuration, where the MO structure of NH3plays a crucial role. The presence of MOs of N or H-originated pushes the unoccupied states of graphene towardsEF. NH3forms an interfacial occupied state originating from N2pbelow theEFwithin ∼1.6 to 2.2 eV for all configurations. These findings enhance fundamental understanding of graphene/NH3system.
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