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Updated: Dec 16, 2025

Exfoliation and Analysis of Large-area, Air-Sensitive Two-Dimensional Materials
Published on: January 5, 2019
Strain-induced vibrational properties of few layer black phosphorus and MoTe2 via Raman spectroscopy
Bhupendra Karki1, Byron Freelon, Manthila Rajapakse
1Department of Physics and Astronomy, University of Louisville, Louisville, KY 40292, United States of America.
Abstract:
We studied and compared the effect of tensile strain on the Raman spectra of black phosphorus (BP) and molybdenum ditelluride (MoTe2) crystals by using a simple custom strain device. In-situ Raman spectroscopy on BP revealed clear red shifting of all three phonon modes, A1 g, B2g and A2 g, under tensile stress. From our theoretical analyses, we found that such red shifting strongly depends on the direction of the strain exerted on the system even within the elastic deformation limit (i.e. strain ≤ 1 %). In particular, calculated results for the strain along the armchair direction are consistent with our experimental data, confirming that the strain applied to the sample acts effectively along the armchair direction. In a comparative study, we found that the effect of strain on the Raman shifting is larger for BP than that for MoTe2, presumably due to the smaller Young's modulus of BP. We also see a remarkable resemblance between donor-type intercalation induced vibrational properties and tensile stress-induced vibrational properties in BP. We anticipate that our method of in-situ Raman spectroscopy can be an effective tool that can allow observation of strain effect directly which is critical for future flexible electronic devices.
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