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Updated: Dec 16, 2025

Plasma-assisted Molecular Beam Epitaxy of N-polar InAlN-barrier High-electron-mobility Transistors
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Hafnium Incorporation in InZnO Thin Film Transistors as a Carrier Suppressor

Donghyeon Lee1, Pyungho Choi1, Areum Park1

  • 1Department of Electrical and Computer Engineering, Sungkyunkwan University, Suwon 16419, Republic of Korea.

Journal of Nanoscience and Nanotechnology
|July 2, 2020
PubMed

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