Batch Fabrication of Silicon Nanometer Tip Using Isotropic Inductively Coupled Plasma Etching

Area of Science:

• Materials Science and Engineering
• Nanotechnology
• Semiconductor Manufacturing

Background:

• Silicon nanometer tips are crucial components in various advanced technologies.
• Existing fabrication methods often face challenges in achieving high yield, precision, and scalability.
• The demand for reliable, mass-produced nanotip structures is increasing.

Purpose of the Study:

• To develop a batch fabrication process for silicon nanometer tips.
• To achieve nanometer-scale apex and low surface roughness.
• To ensure high homogeneity, repeatability, and yield for large-scale manufacturing.

Main Methods:

• Utilized isotropic inductively coupled plasma (ICP) etching technology.
• Developed a specific ICP etching routine for silicon tip fabrication.
• Implemented mask compensation and precise control of lateral etch depth.

Main Results:

• Successfully fabricated silicon tips with apex radius < 5 nm.
• Achieved an aspect ratio > 5 at a tip height of 200 nm.
• Produced tips with heights exceeding 10 μm, demonstrating good etching homogeneity and repeatability at wafer-level.

Conclusions:

• The developed ICP etching process enables efficient batch fabrication of high-quality silicon nanometer tips.
• The process is suitable for large-scale manufacturing due to its high yield and repeatability.
• This advancement is significant for applications requiring precisely fabricated nanostructures.