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An Integrated Gold-Film Temperature Sensor for In Situ Temperature Measurement of a High-Precision MEMS Accelerometer
Xiaoxiao Song1, Huafeng Liu1, Yanyan Fang1
1MOE Key Laboratory of Fundamental Physical Quantities Measurement & Hubei Key Laboratory of Gravitation and Quantum Physics, PGMF and School of Physics, Huazhong University of Science and Technology, Wuhan 430074, China.
Abstract:
Temperature sensors are one of the most important types of sensors, and are employed in many applications, including consumer electronics, automobiles and environmental monitoring. Due to the need to simultaneously measure temperature and other physical quantities, it is often desirable to integrate temperature sensors with other physical sensors, including accelerometers. In this study, we introduce an integrated gold-film resistor-type temperature sensor for in situ temperature measurement of a high-precision MEMS accelerometer. Gold was chosen as the material of the temperature sensor, for both its great resistance to oxidation and its better compatibility with our in-house capacitive accelerometer micro-fabrication process. The proposed temperature sensor was first calibrated and then evaluated. Experimental results showed the temperature measurement accuracy to be 0.08 °C; the discrepancies among the sensors were within 0.02 °C; the repeatability within seven days was 0.03 °C; the noise floor was 1 mK/√Hz@0.01 Hz and 100 μK/√Hz@0.5 Hz. The integration test with a MEMS accelerometer showed that by subtracting the temperature effect, the bias stability within 46 h for the accelerometer could be improved from 2.15 μg to 640 ng. This demonstrates the capability of measuring temperature in situ with the potential to eliminate the temperature effects of the MEMS accelerometer through system-level compensation.
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