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Related Experiment Video

Updated: Dec 16, 2025

In Situ Transmission Electron Microscopy with Biasing and Fabrication of Asymmetric Crossbars Based on Mixed-Phased a-VOx
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Source-measuring unit for characterizing resistive switching devices.

P Stoliar1

  • 1Nanoelectronics Research Institute, National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba, Ibaraki 305-8568, Japan.

The Review of Scientific Instruments
|July 3, 2020
PubMed
Summary
This summary is machine-generated.

A novel home-made source-measuring unit (SMU) was developed for characterizing Resistive Switching (RS) devices. This SMU enables rapid switching between high and low current measurements, crucial for analyzing RS device behavior.

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Area of Science:

  • Materials Science
  • Electrical Engineering
  • Device Physics

Background:

  • Resistive Switching (RS) devices are crucial for next-generation electronics.
  • Accurate characterization of RS devices requires specialized instrumentation.
  • Existing equipment may lack the speed and dynamic range for comprehensive RS analysis.

Purpose of the Study:

  • To present a custom-built, versatile source-measuring unit (SMU) for characterizing Resistive Switching (RS) devices.
  • To enable precise control and measurement of voltage and current during RS device operation.
  • To facilitate the study of device dynamics through rapid current range switching.

Main Methods:

  • Development of a home-made SMU using operational amplifiers.
  • Implementation of rapid switching between high (±25 mA) and low (∼100 nA) current measurement ranges.
  • Integration with a PC via a general-purpose acquisition system (1 DAC, 2 ADC).
  • Utilizing the SMU to generate voltage pulses and measure current responses.

Main Results:

  • The SMU successfully applies voltages up to ±10 V with fast settling times (<1 µs).
  • Achieved rapid switching between high current measurements (<25 µs) and low current measurements (<2 ms) with low noise (<1 nA).
  • Demonstrated the capability to intercalate writing and reading pulses for RS device characterization.
  • Successfully obtained hysteresis switching loops (HSLs) for ferroelectric tunnel junctions.

Conclusions:

  • The developed home-made SMU is a cost-effective and effective tool for characterizing RS devices.
  • The SMU's unique rapid current switching capability enhances the analysis of dynamic RS phenomena.
  • This instrumentation provides a valuable resource for researchers studying memristive and ferroelectric devices.