Design and simulation of pseudo-resistor with extremely high linearity for an improved neural signal recording

Design of a pseudo-resistor (PR) structure based on a bulk driven quasi floating technique is presented, which not only provides a high value of resistance (≈1 TΩ) over a wider voltage swing of -1 V to 1 V, but also displays extremely high linearity. The same is useful for accurate amplification and recording of neural signals for better diagnosis of many chronic diseases. PR design reported in this paper has been simulated in 0.18 µm technology with BSIM3V3 MOS device models in the 6M1P standard process. The proposed PR has been simulated for its accuracy through its use in the design of the neural amplifier with a display of better performance than earlier reported work.