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Potential for sub-mm long erbium-doped composite silicon waveguide DFB lasers
Zhengrui Tu1, Jianhao Zhang1, John Rönn2
1Université Paris-Saclay, CNRS, Centre de Nanosciences et de Nanotechnologies, 91120, Palaiseau, France.
Scientific Reports
|July 4, 2020
Summary
Researchers developed compact, sub-millimeter silicon lasers operating at 1.533 µm. This breakthrough integrates erbium-doped thin films with silicon photonics for efficient C-band on-chip laser realization.
Area of Science:
- Photonics
- Materials Science
- Integrated Optics
Background:
- Compact silicon lasers are crucial for integrated photonic applications.
- Existing technologies face challenges in achieving small footprints and specific wavelengths.
Purpose of the Study:
- To investigate the realization of sub-millimeter, on-chip lasers operating at 1.533 µm.
- To explore hybrid integration of erbium-doped materials with silicon photonics.
Main Methods:
- Designing multi-segment silicon waveguide structures.
- Utilizing quarter-wave shifted distributed feedback (QWS-DFB) structures.
- Employing atomic layer deposition for erbium-doped aluminum oxide thin films.
Main Results:
- Demonstrated feasibility of compact (<500 µm) on-chip laser structures.
- Identified efficient lasing conditions through various DFB structure combinations.
- Achieved operation at 1.533 µm in the C-band.
Conclusions:
- Proposes a viable path for fabricating compact, C-band on-chip lasers.
- Highlights the potential of hybrid integration for advanced photonic devices.
- Confirms low optical pumping power requirements (few mW at 1,470 nm).
