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Spin-dependent transient current in transistor-like nanostructures
Katsuya Asano1, Tokuei Sako1,2, Hiroshi Ishida3
1Graduate School of Quantum Science and Technology, Nihon University, 1-8-14 Kanda Surugadai, Chiyoda-ku, Tokyo 101-8308, Japan.
This study models electron transport in nanostructures, finding that gate voltage can control spin-polarized current extraction. Electron correlation effects, particularly Wigner lattice formation, influence spin-dependent current emission in confined systems.
Area of Science:
- Quantum mechanics
- Condensed matter physics
- Nanotechnology
Background:
- Understanding electron transport in nanostructures is crucial for developing advanced electronic devices.
- Controlling spin-polarized currents is a key goal in spintronics.
Purpose of the Study:
- To investigate transient current in transistor-like nanostructures.
- To explore the influence of gate potential and electron correlation on spin-polarized current emission.
Main Methods:
- A model of few electrons in a one-dimensional potential with source, gate, and drain quantum wells was used.
- The time-dependent Schrödinger equation was solved using a symplectic integrator method.
- Transient current was calculated via probability flux using a complex absorbing potential.
Main Results:
- Gate potential height significantly affects current emission for different electron spin configurations.
- The nanostructures can potentially extract specific spin configurations from unpolarized currents.
- Electron correlation, modulated by source domain size, impacts spin-dependent current, especially in medium/strong confinement regimes.
Conclusions:
- The studied nanostructures show promise for spin-selective current extraction.
- Wigner lattice state formation explains the observed trends in spin-dependent current emission under varying confinement.
- Electron correlation plays a vital role in spin transport phenomena in nanoscopic systems.
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