Low Resistance TiO₂/p-Si Heterojunction for Tandem Solar Cells

Niobium-doped titanium dioxide (Ti_1-xNb_xO₂) films were grown on p-type Si substrates at low temperature (170 °C) using an atomic layer deposition technique. The as-deposited films were amorphous and showed low electrical conductivity. The films became electrically well-conducting and crystallized into the an anatase structure upon reductive post-deposition annealing at 600 °C in an H₂ atmosphere for 30 min. It was shown that the Ti_0.72Nb₀.₂₈O₂/p⁺-Si heterojunction fabricated on low resistivity silicon (10^-3 Ω cm) had linear current-voltage characteristic with a specific contact resistivity as low as 23 mΩ·cm². As the resistance dependence on temperature revealed, the current across the Ti_0.72Nb_0.28O₂/p⁺-Si heterojunction was mainly determined by the band-to-band charge carrier tunneling through the junction.