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A theory of resistivity in Kondo lattice materials: memory function approach
Komal Kumari1, Raman Sharma1, Navinder Singh2
1Department of Physics, Himachal Pradesh University, Shimla, 171005, India.
None:
We have theoretically analysed DC resistivity (ρ) in the Kondo-lattice materials using the powerful memory function formalism. The complete temperature evolution ofρis investigated using the Wölfle-Götze expansion of the memory function. The resistivity in this model originates from spin-flip magnetic scattering of conductions-electron off the quasi-localizeddorfelectron spins. We find the famous resistivity upturn in lower temperature regime (kBT≪μd), whereμdis the effective chemical potential ofd-electrons. In the high temperature regime (μd≪kBT) we discover that resistivity scales as cube root ofT(ρ∝T32). Our results are in reasonable agreement with the experimental results reported in the literature.
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