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Fabrication of Schottky Diodes on Zn-polar BeMgZnO/ZnO Heterostructure Grown by Plasma-assisted Molecular Beam Epitaxy
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Fabrication of Schottky Diodes on Zn-polar BeMgZnO/ZnO Heterostructure Grown by Plasma-assisted Molecular Beam Epitaxy

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Impurity Doping in Mg(OH)2 for n-Type and p-Type Conductivity Control

Masaya Ichimura1

  • 1Department of Electrical and Mechanical Engineering, Nagoya Institute of Technology, Nagoya 466-8555, Japan.

Materials (Basel, Switzerland)
|July 9, 2020
PubMed

Keywords:
Mg(OH)2first-principles calculationsimpurity dopingvalence control

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