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Metal-Semiconductor Junctions01:24

Metal-Semiconductor Junctions

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The contact of metal and semiconductor can lead to the formation of a junction with either Schottky or Ohmic behavior.
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Intrinsic semiconductors are highly pure materials with no impurities. At absolute zero, these semiconductors behave as perfect insulators because all the valence electrons are bound, and the conduction band is empty, disallowing electrical conduction. The Fermi level is a concept used to describe the probability of occupancy of energy levels by electrons at thermal equilibrium. In intrinsic semiconductors, the Fermi level is positioned at the midpoint of the energy gap at absolute zero. When...
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Biasing metal-semiconductor junctions involves applying a voltage across the junction. Specifically, the metal is connected to a voltage source, while the semiconductor is grounded. This technique is essential for controlling the direction and magnitude of current flow in electronic devices, including diodes, transistors, and photovoltaic cells.
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Enhancement-mode MOSFETs are pivotal components in electronics, distinguished by their capacity to act as highly efficient switches. They are part of the larger family of metal-oxide Semiconductor Field-Effect Transistors (MOSFETs). They are available in two types: p-channel and n-channel, each tailored to specific polarity operations.
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Impurity Doping in Mg(OH)2 for n-Type and p-Type Conductivity Control.

Masaya Ichimura1

  • 1Department of Electrical and Mechanical Engineering, Nagoya Institute of Technology, Nagoya 466-8555, Japan.

Materials (Basel, Switzerland)
|July 9, 2020
PubMed
Summary

Magnesium hydroxide, typically an insulator, can be transformed into a semiconductor through impurity doping. First-principles calculations reveal specific impurities that can create shallow donors and acceptors, enabling electronics applications.

Keywords:
Mg(OH)2first-principles calculationsimpurity dopingvalence control

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Area of Science:

  • Materials Science
  • Condensed Matter Physics
  • Computational Materials Science

Background:

  • Magnesium hydroxide (Mg(OH)2) possesses a wide bandgap (~5.7 eV), classifying it as an electrical insulator.
  • Understanding impurity effects is crucial for tailoring material properties for electronic applications.

Purpose of the Study:

  • To computationally predict the energy levels of impurities within the Mg(OH)2 lattice.
  • To explore the potential of Mg(OH)2 as a wide-gap semiconductor through impurity doping.

Main Methods:

  • First-principles calculations were employed to investigate impurity doping in Mg(OH)2.
  • A 135-atom supercell model of brucite Mg(OH)2 was utilized.
  • Density-of-states analysis was performed on charge-neutral cells with substitutional or interlayer impurities.

Main Results:

  • Trivalent cations (Al, Fe) at Mg sites and certain alkali/coinage metals (Cu, Ag, Na, K) at interlayer sites act as shallow donors.
  • An interlayer fluorine (F) atom was identified as a potential shallow acceptor.
  • Impurity doping can effectively control the electronic valence of Mg(OH)2.

Conclusions:

  • Impurity doping can convert the insulating Mg(OH)2 into a functional wide-gap semiconductor.
  • The identified shallow donors and acceptors offer pathways for creating n-type and p-type Mg(OH)2 materials.
  • This research opens possibilities for novel electronics applications utilizing doped Mg(OH)2.